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| 2SK1304 Silicon N-Channel MOS FET Application TO-3P High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 40 160 40 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1304 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 22 -- -- -- -- -- -- -- -- -- -- -- 0.025 0.03 35 3500 1400 340 25 170 730 300 1.2 10 250 2.0 0.03 0.04 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF/dt = 50 A/s ID = 20 A, VGS = 10 V, RL = 1.5 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------- --------------------- ID = 20 A, VGS = 4 V * ID = 20 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 300 -- ns -------------------------------------------------------------------------------------- 2SK1304 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 500 200 Drain Current ID (A) 100 50 Maximum Safe Operation Area Operation in this Area is Limited by RDS (on) 80 10 D C 10 PW O pe 0 1 20 10 5 2 1.0 = m s s ra 10 n s m (T tio s (1 = 40 C Sh 25 ot ) Ta = 25C C ) 0 50 100 Case Temperature TC (C) 150 0.5 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 5V 7V 80 Drain Current ID (A) Drain Current ID (A) 4V 40 50 Pulse Test Typical Transfer Characteristics VDS = 10 V Pulse Test 60 3.5 V 40 3V 20 VGS = 2.5 V 30 20 75C 10 TC = 25C -25C 0 8 4 12 16 Drain to Source Voltage VDS (V) 20 0 1 3 4 2 Gate to Source Voltage VGS (V) 5 2SK1304 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 2.0 Pulse Test 50 A 1.2 0.5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 0.005 2 5 10 20 50 100 Drain Current ID (A) 200 1.6 0.8 20 A 0.4 ID = 10 A 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.10 Pulse Test ID = 50 A 0.06 VGS = 4 V 20 A 10 A 0.04 50 A 20 A 10 A VGS = 10 V 50 Forward Transfer Admittance vs. Drain Current 0.08 20 10 5 -25C TC = 25C 75C 2 1.0 0.02 VGS = 10 V Pulse Test 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1304 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 20 10 5 0.5 10 2 1.0 10 20 5 Reverse Drain Current IDR (A) 50 0 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 1,000 Coss Crss 100 VGS = 0 f = 1 MHz 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDS VDD = 25 V 50 V 80 V 60 VDD = 80 V 50 V 25 V 20 ID = 40 A 4 VGS 12 20 Gate to Source Voltage VGS (V) 1,000 Switching Characteristics td (off) 500 Switching Time t (ns) tf 200 100 50 td (on) 20 10 0.5 VGS = 10 V PW = 2 s, duty < 1% 1.0 5 20 10 2 Drain Current ID (A) 50 tr 80 16 40 8 0 0 40 120 160 80 Gate Charge Qg (nc) 200 2SK1304 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 10 V 5V 20 10 VGS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 Pu hot ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM lse 0.03 1S 0.01 10 T 100 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 2SK1304 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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